Silicon vs Gallium Nitride: The Chain Reaction Created by Switching Speed
Silicon vs Gallium Nitride: The Ripple Effect of Switching Speed
Why a Wider Bandgap Leads to Smaller Transformers Inside Chargers
Silicon
1.1 eV Bandgap (Energy Barrier)
↓
About 65 kHz Standard Switching Frequency
↓
Requires Larger Transformers and Magnetic Components
Gallium Nitride
3.4 eV Bandgap (Energy Barrier)
↓
130~300 kHz Achievable Switching Frequency
↓
Significantly Reduced Transformers and Magnetic Components
Baseline Volume · Heat Generation
−40% Volume Compared to Equivalent Silicon
Heat Generation −30%